Corrigendum: Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance
نویسندگان
چکیده
This Article contains errors in the insets of Figures 3(a), 3(b) and 3(c), where the stress values were incorrectly given as three times smaller than the correct GPa values. The correct Figure 3 appears below as Figure 1. As such, in the Results section, under subheading 'Strain modulated electronic structure. ' : " The Young's modulus along x, y and z directions can be evaluated to be 49.89 GPa, 15.11 GPa and 15.68 GPa based on the slopes of the stress-strain curves plotted in the insets of Fig. 3, revealing that BP is indeed much harder in x direction than in y or z direction. " should read: " The Young's modulus along x, y and z directions can be evaluated to be 149.7 GPa, 45.3 GPa and 47.0 GPa based on the slopes of the stress-strain curves plotted in the insets of Fig. 3, revealing that BP is indeed much harder in x direction than in y or z direction. " " If the compressive strain is large enough, i.e., about − 10% (corresponding to an external pressure 7.67 GPa) or more, the gap vanishes and BP turns into a metal. With increasing the strain, the direct band gap goes to a maximum (about 0.6 eV) at 8% (corresponding to the tensile strength 2.63 GPa), and then the band gap becomes indirect and declines quickly. " should read: " If the compressive strain is large enough, i.e., about − 10% (corresponding to an external pressure 23.01 GPa) or more, the gap vanishes and BP turns into a metal. With increasing the strain, the direct band gap goes to a maximum (about 0.6 eV) at 8% (corresponding to the tensile strength 7.89 GPa), and then the band gap becomes indirect and declines quickly. " " The metal-semiconductor transition occurs at − 5% strain (0.77 GPa external pressure), and the direct-indirect critical point is at 3% strain (0.44 GPa tensile strength), which are nearly one order of magnitude lower than the pressure needed for the strain along the x direction for such a transition. " OPEN
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Hinge-like structure induced unusual properties of black phosphorus and new strategies to improve the thermoelectric performance
We systematically investigated the geometric, electronic and thermoelectric (TE) properties of bulk black phosphorus (BP) under strain. The hinge-like structure of BP brings unusual mechanical responses such as anisotropic Young's modulus and negative Poisson's ratio. A sensitive electronic structure of BP makes it transform among metal, direct and indirect semiconductors under strain. The maxi...
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